MOCVD of Vanadium Oxide Films with a Novel Vanadium(III) Precursor

被引：16

作者：

Crociani, Laura ^{[1
]}

Carta, Giovanni ^{[1
]}

Natali, Marco ^{[1
]}

Rigato, Valentino ^{[2
]}

Rossetto, Gilberto ^{[1
]}

机构：

[1] CNR, Inst Chim Inorgan & Superfici, I-35127 Padua, Italy

[2] Ist Nazl Fis Nucl, LNL, I-35020 Legnaro, Italy

来源：

CHEMICAL VAPOR DEPOSITION | 2011年 / 17卷 / 1-3期

关键词：

CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; VO2; ALKOXIDES; COATINGS; GLASS; CVD;

D O I：

10.1002/cvde.201004291

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this communication we report the synthesis and characterization of the vanadium (III) alkoxide [V(OCMe2CH2OMe)(3)], which presents an appreciable volatility (55 degrees C/1.5 Torr), its successful use as MOCVD precursor for the deposition of pure VO2 and V2O5 films and the characterization of the films by means of Rutherford Backscattering Spectroscopy (RBS), X-Ray Diffraction (XRD) and Cyclic Voltammetry.

引用

页码：6 / 8

页数：3

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