Progress and applications of cluster ion beam technology

被引：44
作者：
Yamada, I. [1 ]
Matsuo, J. [2 ]
Toyoda, N. [1 ]
Aoki, T. [3 ]
Seki, T. [4 ]
机构：
[1] Univ Hyogo, Grad Sch Engn, Kobe, Hyogo 6500044, Japan
[2] Kyoto Univ, Quantum Sci & Engn Ctr, Kyoto 6068501, Japan
[3] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan
[4] Kyoto Univ, Dept Nucl Engn, Kyoto 6068501, Japan
来源：
CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE | 2015年 / 19卷 / 01期
基金：
日本科学技术振兴机构;
关键词：
Cluster ion beam; Gas cluster ion beam (GCIB); MD simulation; Low energy implantation; Lateral sputtering; Surface modification; Surface smoothing; Bio-materials; Analytical instrumentation; MOLECULAR-DYNAMICS SIMULATIONS; KEV C-60;
D O I：
10.1016/j.cossms.2014.11.002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cluster ion beam processing has been extensively developed during the 25 years since the concept originated. Low energy surface interaction effects, lateral sputtering phenomena and high-rate chemical reaction effects have been explored experimentally and have been explained by means of molecular dynamics (MD) modeling. Practical production equipment for a wide range of applications has also been successfully developed. The technology is now advancing rapidly in the fields of sub-nanoscale processing of metals, semiconductors and insulating materials. This paper reviews important events which have taken place during the development with emphasis placed on emerging new advances which have occurred during several recent years. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：12 / 18
页数：7
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