Amorphous-semiconductor-contact germanium-based detectors for gamma-ray imaging and spectroscopy

被引:44
作者
Amman, M. [1 ]
Luke, P. N.
Boggs, S. E.
机构
[1] Univ Calif Berkeley, Ernest Orlando Lawrence Berkeley Nat Lab, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
基金
美国国家航空航天局;
关键词
gamma-ray imaging; gamma-ray spectroscopy; Germanium detector; orthogonal strip; position sensing;
D O I
10.1016/j.nima.2007.05.307
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Germanium-based detectors are the standard technology used for gamma-ray spectroscopy when high efficiency and excellent energy resolution are desired. By dividing the electrical contacts on these detectors into segments, the locations of the gamma-ray interaction events within the detectors can be determined as well as the deposited energies. This enables simultaneous gamma-ray imaging and spectroscopy and leads to applications in the areas of astronomy, nuclear physics, environmental remediation, nuclear nonproliferation, and homeland security. Producing the fine-pitched electrode segmentation often required for imaging has been problematic in the past. To address this issue, we have developed an amorphous-semiconductor contact technology. Using this technology, fully passivated detectors with closely spaced contacts can be produced using a simple fabrication process. The current state of the amorphous-semiconductor contact technology and the challenges that remain are given in this paper. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:886 / 890
页数:5
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