Magnetotransport study of the intersubband scattering in an Si δ-doped GaAs

被引：2

作者：

Katsuno, M ^{[1
]}

Sawaki, N

Suzuki, T

Hara, K

机构：

[1] Nagoya Univ, Dept Elect, Chikusa Ku, Nagoya, Aichi 46401, Japan

[2] Denso Corp, Fundamental Res Labs, Aichi 47001, Japan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 07期

关键词：

D O I：

10.1088/0268-1242/13/7/013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The magneto-transport of an FET with a channel of an Si delta-doped GaAs layer is studied at 4.2 K to reveal the transport properties in the subband structure. The Shubnikov-de Haas effect is analysed as a function of the gate bias voltage to estimate the variation of the electron density as well as the mobility in each subband. It is found that the carrier density decreases linearly as a function of the gate voltage. The electron mobility in a given subband shows however an anomalous nonlinear decrease, which is attributed to intersubband scattering.

引用

页码：739 / 745

页数：7

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