The effect of metals (Au, Ag) and oxidizing ambient on interfacial reactions in Au/Si and Ag/Si systems

被引：4

作者：

Adams, D

Julies, BA

Mayer, JW

Alford, TL

机构：

[1] Univ Western Cape, Dept Phys, ZA-7535 Bellville, South Africa

[2] Arizona State Univ, Dept Chem & Mat Engn, Tempe, AZ 85287 USA

来源：

APPLIED SURFACE SCIENCE | 2003年 / 216卷 / 1-4期

关键词：

silicon; gold; silver; oxidation; agglomeration; electronegativity;

D O I：

10.1016/S0169-4332(03)00513-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Deposited metal layers on single crystal silicon can react at low temperature in an oxidizing ambient to produce silicon oxide. Akio Hiraki carried out the pioneering work in the early 1970s at California Institute of Technology. In this study Au/Si is revisited and compared with the Ag/Si system. Under oxidizing ambient conditions where oxide layers are formed in the Au/Si, no detectable oxide layers are formed in the Ag/Si system. The Ag layers agglomerates into a discontinuous film. (C) 2003 Published by Elsevier Science B.V.

引用

页码：163 / 168

页数：6

共 14 条

[1] Titanium-nitride self-encapsulation of Cu and Ag films on silicon dioxide [J].