A Tunable Dual-Band Bandpass-to-Bandstop Filter Using p-i-n Diodes and Varactors

被引:30
作者
Chen, Fu-Chang [1 ]
Li, Run-Shuo [1 ]
Chen, Ji-Peng [1 ]
机构
[1] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China
来源
IEEE ACCESS | 2018年 / 6卷
基金
中国国家自然科学基金;
关键词
Bandpss-to-bandstop filter; dual-band; PIN diode; varactor; RF-MEMS; TRANSMISSION ZEROS; RESONATORS; SELECTIVITY; DIPLEXER; DESIGN;
D O I
10.1109/ACCESS.2018.2862887
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
In this paper, a tunable dual-band bandpass-to-bandstop filter and its analysis are proposed. The bandpass-to-bandstop transformation could be obtained by changing the state of the p-i-n diode. Using two sets of half-wavelength resonators loaded with varactors, the center frequency of each band can be tuned independently by adjusting the varactors. In order to achieve the controlling of the external quality factors (Q(e)) for the bandpass mode, the feeding lines are loaded with two varactors and wide tuning range of Q(e) can be obtained. In the bandpass mode, the lower passband tuning range is from 1.7 to 2.2 GHz (25.6% tuning range) with return loss better than 10.5 dB, and the tuning range of higher passband is from 2.2 to 2.7 GHz (20.4% tuning range) with return loss better than 12.9 dB. For the bandstop mode, the lower stopband tuning range is from 1.7 to 2.3 GHz (30% tuning range) and the higher stopband tuning range is from 2.3 to 2.9 GHz (23.1% tuning range), while the rejection level is higher than 16.4 dB in the stopband.
引用
收藏
页码:46058 / 46065
页数:8
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