Thickness effects on the microstructure and electrical/thermoelectric properties of co-evaporated Bi-Te thin films

被引:13
作者
Shen, Haishan [1 ,3 ]
Lee, Suhyeon [3 ]
Kang, Jun-gu [1 ]
Eom, Tae-Yil [2 ]
Lee, Hoojeong [1 ]
Kang, Chiwon [1 ]
Han, Seungwoo [3 ]
机构
[1] Sungkyunkwan Univ, Dept Adv Mat Sci & Engn, 2066 Seobu Ro, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, Div Sungkyunkwan Adv Inst Nanotechnol SAINT, 2066 Seobu Ro, Suwon 440746, South Korea
[3] Korea Inst Machinery & Mat, Dept Nano Appl Mech, 156 Gajeongbuk Ro, Daejeon Si 34103, South Korea
关键词
Bi-Te film; Thickness; Columnar structure; Electrical and thermoelectric properties; THERMOELECTRIC PROPERTIES; PERFORMANCE; COEFFICIENT; TEMPERATURE; DEPENDENCE; DEPOSITION; SCATTERING; ALLOYS; GROWTH; IMAGEJ;
D O I
10.1016/j.jallcom.2018.07.125
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this study, we investigated the effect of film thickness on the electrical and thermoelectric properties of bismuth-tellurium (Bi-Te) films. Bi-Te films of 1-, 4-, 10-, and 18-mu m thicknesses were deposited via co evaporation. Microstructural analyses using X-ray diffraction, scanning electron microscopy, and transmission electron microscopy indicated columnar film growth, with a highly porous structure that increased with the film thickness. The electron mobility of the films decreased significantly as the film thickness increased, which may be explained by the film porosity. Given a fairly constant Seebeck coefficient, the power factor decreased significantly with film thickness: 2.8 mW/mK(2) for the 1-mu m-thick film and 1.5 mW/mK(2) for the 18-mu m-thick Bi-Te film. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:522 / 527
页数:6
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