Electromechanical robustness of monolayer graphene with extreme bending

被引:43
作者
Briggs, Benjamin D. [1 ]
Nagabhirava, Bhaskar [1 ]
Rao, Gayathri [1 ]
Geer, Robert [1 ]
Gao, Haiyuan [2 ]
Xu, Yang [2 ]
Yu, Bin [1 ]
机构
[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA
[2] Zhejiang Univ, Dept Informat Sci & Elect Engn, Inst Microelect & Optoelect, Hangzhou 310027, Peoples R China
基金
美国国家科学基金会;
关键词
SUSPENDED GRAPHENE; SHEETS; CARBON; STRAIN;
D O I
10.1063/1.3519982
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the electromechanical robustness of graphene in an extreme condition of deformation: uniaxial bending. A large-angle-bent graphene monolayer was obtained with a predefined template. Structural/mechanical analysis is conducted, followed by electronic transport measurement. Raman spectroscopy analysis suggests negligible strain in the significantly bent graphene, showing mechanical robustness of the two-dimensional carbon nanostructure. The impact on band structure with respect to key deformation parameters (bending angle and curvature radius) were investigated using sp(3) tight-binding simulation. Results show insignificant local band modification at bending locations. Even with extreme deformation, excellent carrier mobility in monolayer graphene is preserved. (C) 2010 American Institute of Physics. [doi:10.1063/1.3519982]
引用
收藏
页数:3
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