Positron annihilation spectroscopy in doped p-type ZnO

被引：0

作者：

Majumdar, Sayanee ^{[1
]}

Sanyal, D.

机构：

[1] Saha Inst Nucl Phys, Kharagpur 721302, W Bengal, India

来源：

SOLID STATE PHYSICS: PROCEEDINGS OF THE 55TH DAE SOLID STATE PHYSICS SYMPOSIUM 2010, PTS A AND B | 2011年 / 1349卷

关键词：

ZnO; Positron Annihilation; Vacancies; defects;

D O I：

10.1063/1.3606238

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Positron annihilation lifetime (PAL) spectroscopy has been used to investigate the vacancy type defect of the Li and N doped ZnO. The mono-vacancies, shallow -vacancies and open volume defects have been found in both the Li and N doped ZnO. The mono-vacancies, shallow-vacancies and open volume defects increase in N-doped ZnO as the size of N is quite high compared to Li. Positron annihilation study showed that the doping above 1-3 % Li and 3-4% N in ZnO are not required in order to achieve low resistivity, high hole concentration and good mobility.

引用

页码：1083 / +

页数：2