MBE of quantum wires and quantum dots

被引：19
作者：
Nötzel, R
Ploog, KH
机构：
[1] Eindhoven Univ Technol, COBRA Inter Univ Res Inst, NL-5600 MB Eindhoven, Netherlands
[2] Paul Drude Inst Solid State Elect, D-10117 Berlin, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷
关键词：
low dimensional structures; molecular epitaxy; semiconducting III-V materials;
D O I：
10.1016/S0022-0248(01)00624-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The fabrication of semiconductor quantum wire and quantum dot arrays with high uniformity and controlled positioning is an outstanding challenge in nanostructure materials science. We demonstrate a significant step forward by combining self-organized epitaxial growth with lithographic patterning and the assistance of atomic hydrogen on high-index GaAs substrates. This concept provides a strict control of chemical, structural and geometric perfection of these semiconductor nanostructures which is needed for realistic device applications. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：8 / 12
页数：5
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