Nitrogen incorporation and growth kinetics of GaAsN/GaAs epilayers grown by MOVPE

被引：0

作者：

Auvray, L ^{[1
]}

Dumont, H ^{[1
]}

Dazord, J ^{[1
]}

Monteil, Y ^{[1
]}

Bouix, J ^{[1
]}

机构：

[1] Univ Lyon 1, CNRS, UMR 5615, LMI, F-69622 Villeurbanne, France

来源：

NEW METHODS, MECHANISMS AND MODELS OF VAPOR DEPOSITION | 2000年 / 616卷

关键词：

D O I：

10.1557/PROC-616-189

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The nitrogen incorporation behavior in GaAs was investigated in the growth temperature range 500-600 degreesC. It was observed that the temperature-dependence of the nitrogen incorporation exhibits two regimes. At 530 degreesC, the nitrogen content x is a nonlinear function of the gas-phase composition indicating a surface-controlled reaction mechanism. The N composition varies slowly with 500 degreesC < T < 560 degreesC with an activation energy of 0.6 eV. For T > 560 degreesC, N decreases exponentially with E-a= 3.7 eV, interpreted in terms of nitrogen desorption. In light of experimental results, we propose a surface kinetic model based on the competitive adsorption of group V precursors.

引用

页码：189 / 194

页数：4

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