Self-patterned Nano Structures in Structurally Gradient Epitaxial La0.5Ba0.5CoO3 Films

被引:14
作者
He, Jie [1 ]
Jiang, Jiechao [1 ]
Liu, Jian [2 ]
Liu, Ming [2 ]
Collins, Greg [2 ]
Ma, Chunrui [2 ]
Chen, Chonglin [2 ]
Meletis, Efstathios I. [1 ]
机构
[1] Univ Texas Arlington, Dept Mat Sci & Engn, Arlington, TX 76019 USA
[2] Univ Texas San Antonio, Dept Phys & Astron, San Antonio, TX 77204 USA
基金
美国国家科学基金会;
关键词
Electron microscopy; High-resolution transmission electron; microscopy; Electron diffraction; Epitaxy; Oxides; Magnetic properties; TRANSITION; CO;
D O I
10.1016/j.tsf.2011.02.015
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Highly epitaxial La0.5Ba0.5CoO3 (LBCO) thin films with sharp interface and a thickness of 200 nm were epitaxially grown on (001) SrTiO3 substrates using pulsed laser deposition. High-resolution transmission electron microscopy and electron diffraction analysis revealed that the films have a triple-layered structure. The first layer, close to the film/substrate interface, has a thickness of similar to 6 nm and is a defect free single crystal disordered cubic structure (a = 3.882 angstrom) which has a lattice mismatch of - 0.59% with respect to the substrate. The second layer which dominates the film structure has a single crystal disordered cubic structure (a = 3.854 angstrom) which has a lattice mismatch of - 1.31% with respect to the substrate. The third layer located on the top of the film has a thickness of several nanometers and consists of 112-type ordered tetragonal structure. The cubic structures in the first and second layer have an orientation relationship of (001)(LBCO)//(001)(STO) and < 100 >(LBCO)//< 100 >(STO) with respect to the substrate. Self-patterned 3-dimensional nano structures with a dimension range from 2 to 10 nm were formed in the second and third layers. These nano structures were formed by the enclosure of anti-phase boundary planes which are parallel to the {100} of the cubic structure. Epitaxial LBCO thin films with such nano structures are hard ferromagnetic with a large coercive field value and magnetoresistance effect value (similar to 24%), and exhibit semiconductor behavior at temperatures <300 K. (c) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:4371 / 4376
页数:6
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