Photoelectron spectroscopy of electronic surface structure of the Cs/GaN and Cs/InN interfaces

被引：3

作者：

Timoshnev, Sergei ^{[1
]}

Benemanskaya, Galina ^{[2
]}

Iluridze, Georgi ^{[3
]}

Minashvili, Tamaz ^{[3
]}

机构：

[1] Alferov Univ, Lab Nanoelect, St Petersburg 194021, Russia

[2] RAS, Div Solid State Phys, Ioffe Inst, St Petersburg 194021, Russia

[3] Georgian Tech Univ, Dept Phys, GE-0175 Tbilisi, Georgia

来源：

SURFACE AND INTERFACE ANALYSIS | 2020年 / 52卷 / 10期

关键词：

electronic structure; III-nitrides; metal-III-nitride interfaces; photoelectron spectroscopy; surface states; LIGHT-EMITTING-DIODES; CS ADSORPTION; PHOTOEMISSION; INN; GAN; STATES; FILMS; BAND; RICH;

D O I：

10.1002/sia.6801

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electronic structure of the epitaxial GaN, InN nanolayers, and the ultrathin Cs/GaN and Cs/InN interfaces was investigated under ultrahigh vacuum at various Cs coverages. The experiment was carried out using synchrotron-based photoelectron spectroscopy. The photoemission spectra of the valence band and the In 4d, N 2s, Ga 3d, and Cs 4d semicore levels were studied as a function of Cs coverages. It was found that the Cs adsorption in the submonolayer coverage region causes substantial changes in the spectra due to charge transfer between the Cs adlayer and surface Ga or In atoms. The strong interaction of the dangling bonds of Ga or In with Cs adatoms effectively increases the Ga or In valency.

引用

页码：620 / 625

页数：6

共 27 条

[1] Synchrotron radiation photoemission study of the ultrathin Cs/InN interface [J].

Benemanskaya, G. V. ;

Lapushkin, M. N. ;

Timoshnev, S. N. ;

Nelubov, A. V. .

SOLID STATE COMMUNICATIONS, 2015, 217 :34-37

[2] Modification of the Electronic Structure and Formation of an Accumulation Layer in Ultrathin Ba/n-GaN and Ba/n-AlGaN Interfaces [J].

Benemanskaya, G. V. ;

Timoshnev, S. N. ;

Ivanov, S. V. ;

Frank-Kamenetskaya, G. E. ;

Marchenko, D. E. ;

Iluridze, G. N. .

JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2014, 118 (04) :600-610

[3] Surface states and accumulation nanolayer induced by Ba and Cs adsorption on the n-GaN(0001) surface [J].

Benemanskaya, G. V. ;

Lapushkin, M. N. ;

Timoshnev, S. N. .

SURFACE SCIENCE, 2009, 603 (16) :2474-2478

[4] Changes in electronic and adsorption properties under Cs adsorption on GaAs(100) in the transition from As-rich to Ga-rich surface [J].

Benemanskaya, GV ;

Daineka, DV ;

Frank-Kamenetskaya, GE .

SURFACE SCIENCE, 2003, 523 (03) :211-217

[5] Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates [J].

Chakraborty, A ;

Baker, TJ ;

Haskell, BA ;

Wu, F ;

Speck, JS ;

Denbaars, SP ;

Nakamura, S ;

Mishra, UK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (28-32) :L945-L947

[6] PHOTOEMISSION-STUDY OF THE CS/GAP(110) INTERFACE AT LOW-TEMPERATURES [J].

CHASSE, T ;

PAGGEL, J ;

NEUHOLD, G ;

THEIS, W ;

HORN, K .

SURFACE SCIENCE, 1994, 307 :295-302

[7]

Davydov VY, 2002, PHYS STATUS SOLIDI B, V234, P787, DOI 10.1002/1521-3951(200212)234:3<787::AID-PSSB787>3.0.CO

[8]

2-H

[9] Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays [J].

DenBaars, Steven P. ;

Feezell, Daniel ;

Kelchner, Katheryn ;

Pimputkar, Siddha ;

Pan, Chi-Chen ;

Yen, Chia-Chen ;

Tanaka, Shinichi ;

Zhao, Yuji ;

Pfaff, Nathan ;

Farrell, Robert ;

Iza, Mike ;

Keller, Stacia ;

Mishra, Umesh ;

Speck, James S. ;

Nakamura, Shuji .

ACTA MATERIALIA, 2013, 61 (03) :945-951

[10] Theoretical study of Cs adsorption on GaN(0001) surface [J].

Du Yujie ;

Chang Benkang ;

Wang Xiaohui ;

Zhang Junju ;

Li Biao ;

Wang Meishan .

APPLIED SURFACE SCIENCE, 2012, 258 (19) :7425-7429

← 1 2 3 →