A surface potential based drain current model for asymmetric double gate MOSFETs

被引：12
作者：
Dutta, Pradipta [2 ]
Syamal, Binit [1 ]
Mohankumar, N. [3 ]
Sarkar, C. K. [1 ]
机构：
[1] Jadavpur Univ, Dept Elect & Commun Engn, Kolkata 700032, India
[2] KIIT Univ, Sch Technol Elect & Telecommun Engn, Bhubaneswar 751024, Orissa, India
[3] SKP Engn Coll, Thiruvannamalai 606611, Tamil Nadu, India
来源：
SOLID-STATE ELECTRONICS | 2011年 / 56卷 / 01期
关键词：
Asymmetric double gate MOSFET; Poisson's equation; Pao-Sah's double integral; Short-channel effects; THRESHOLD VOLTAGE; COMPACT MODEL; CHARGE; DG; PERFORMANCE; SLOPE;
D O I：
10.1016/j.sse.2010.10.025
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we present a generic surface potential based current voltage (I-V) model for doped or undoped asymmetric double gate (DG) MOSFET. The model is derived from the 1-D Poisson's equation with all the charge terms included and the channel potential is solved for the asymmetric operation of DG MOSFET based on the Newton-Raphson iterative method. A noncharge sheet based drain current model based on the Pao-Sah's double integral method is formulated in terms of front and back gate surface potentials at the source and drain end. The model is able to clearly show the dependence of the front and back surface potential and the drain current on the terminal voltages, gate oxide thicknesses, channel doping concentrations and the Silicon body thickness and a good agreement is observed with the 2-D numerical simulation results. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：148 / 154
页数：7
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