Epitaxial growth and magnetic properties of Fe3Si/CaF2/Fe3Si tunnel junction structures on CaF2/Si(111)

被引：9
作者：
Harianto, Teddy [1 ]
Kobayashi, Ken'ichi
Suemasu, Takashi
Akinaga, Hiro
机构：
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[2] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 36-40期
关键词：
D O I：
10.1143/JJAP.46.L904
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have successfully grown Fe3Si/CaF2/Fe3Si epitaxial. magnetic tunnel junction structures with a 2-nm-thick CaF2 barrier layer on Si(111) substrates by molecular beam epitaxy (MBE). Magnetization vs magnetic field measurement using a superconducting quantum interference device (SQUID) showed a clear two-step hysteresis loop at room temperature. This means that the two ferromagnetic layers were fully separated by the CaF2 barrier layer.
引用
收藏
页码：L904 / L906
页数：3
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