Effect of deposition time on structural, electrical, and optical properties of SnS thin films deposited by chemical bath deposition

被引：141
作者：
Guneri, E. [2 ]
Ulutas, C. [1 ]
Kirmizigul, F. [1 ]
Altindemir, G. [1 ]
Gode, F. [3 ]
Gumus, C. [1 ]
机构：
[1] Cukurova Univ, Dept Phys, TR-01330 Adana, Turkey
[2] Erciyes Univ, Dept Primary Educ, TR-38039 Kayseri, Turkey
[3] Mehmet Akif Ersoy Univ, Dept Phys, TR-15030 Burdur, Turkey
来源：
APPLIED SURFACE SCIENCE | 2010年 / 257卷 / 04期
关键词：
SnS; Thin film; Chemical bath deposition; SPRAY-PYROLYSIS; SUBSTRATE-TEMPERATURE; DEPENDENCE; COPPER; ELECTRODEPOSITION; GROWTH;
D O I：
10.1016/j.apsusc.2010.07.104
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The effect of deposition time on the structural, electrical and optical properties of SnS thin films deposited by chemical bath deposition onto glass substrates with different deposition times (2, 4, 6, 8 and 10 h) at 60 degrees C were investigated. The obtained films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and optical absorption spectra. All deposited films were polycrystalline and had orthorhombic structure with small crystal grains. Their microstructures had changed with deposition time, and their compositions were nearly stoichiometric. Electrical parameters such as resistivity and type of electrical conduction were determined from the Hall Effect measurements. Hall Effect measurements show that obtained films have p-type conductivity and resistivity values of SnS films have changed with deposition time. For allowed direct, allowed indirect, forbidden direct and forbidden indirect transitions, band gap values varied in the range 1.30-1.97 eV, 0.83-1.36 eV, 0.93-1.49 eV and 0.62-1.23 eV, respectively. (C) 2010 Elsevier B. V. All rights reserved.
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页码：1189 / 1195
页数：7
相关论文
共 31 条
[1]   A PHOTO-ELECTROCHEMICAL CELL BASED ON CHEMICALLY DEPOSITED SB2SE3 THIN-FILM ELECTRODE AND DEPENDENCE OF DEPOSITION ON VARIOUS PARAMETERS [J].
BHATTACHARYA, RN ;
PRAMANIK, P .
SOLAR ENERGY MATERIALS, 1982, 6 (03) :317-322
[2]   The structure and properties of SnS thin films prepared by pulse electro-deposition [J].
Cheng, Shuying ;
Chen, Yanqing ;
He, Yingjie ;
Chen, Guonan .
MATERIALS LETTERS, 2007, 61 (06) :1408-1412
[3]   Characterization of SnS films prepared by constant-current electro-deposition [J].
Cheng, SY ;
Chen, YQ ;
Huang, CC ;
Chen, GN .
THIN SOLID FILMS, 2006, 500 (1-2) :96-100
[4]   Grain size dependence of the bandgap in chemical bath deposited CdS thin films [J].
Cortes, A ;
Gomez, H ;
Marotti, RE ;
Riveros, G ;
Dalchiele, EA .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2004, 82 (1-2) :21-34
[5]   Influence of annealing on physical properties of evaporated SnS films [J].
Devika, M. ;
Reddy, N. Koteeswara ;
Ramesh, K. ;
Gunasekhar, K. R. ;
Gopal, E. S. R. ;
Reddy, K. T. Ramakrishna .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (08) :1125-1131
[6]   Investigations of the properties of Zn1-xCrxO thin films grown by RF magnetron sputtering [J].
Elanchezhiyan, J. ;
Bhuvana, K. P. ;
Gopalakrishnan, N. ;
Shin, B. C. ;
Lee, W. J. ;
Balasubramanian, T. .
JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 478 (1-2) :45-48
[7]   Fabrication and optical properties of SnS thin films by SILAR method [J].
Ghosh, Biswajit ;
Das, Madhumita ;
Banerjee, Pushan ;
Das, Subrata .
APPLIED SURFACE SCIENCE, 2008, 254 (20) :6436-6440
[8]  
Göde F, 2009, J OPTOELECTRON ADV M, V11, P429
[9]  
Güneri E, 2009, OPTOELECTRON ADV MAT, V3, P383
[10]  
Hodes G., 2003, CHEM SOLUTION DEPOSI, P31
1234