Cu films containing insoluble Ru and RuNX on barrierless Si for excellent property improvements

被引：68

作者：

Chu, J. P. ^{[1
]}

Lin, C. H.

John, V. S.

机构：

[1] Natl Taiwan Univ, Dept Polymer Engn, Taipei 10607, Taiwan

[2] Chin Min Inst Technol, Dept Elect Mat, Tou Fen 35153, Taiwan

[3] Natl Taiwan Ocean Univ, Inst Mat Engn, Chilung 20224, Taiwan

[4] TDMNS Coll, Dept Phys, T Kallikulam 627113, India

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 13期

关键词：

D O I：

10.1063/1.2790843

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports superior properties of Ru- and RuNX-bearing Cu films deposited by cosputtering on barrierless Si substrates. After annealing at temperatures up to 680 degrees C for 1 h, low resistivity of similar to 3 mu Omega cm and minimal leakage currents as well as no detectable reaction at the Cu/Si interface have confirmed the excellent thermal stability of these Cu(Ru) and Cu(RuNX) films. Furthermore, the highly stable Cu(RuNX) film exhibits an outstanding adhesion property, proving to be a very promising candidate for the barrierless Cu metallization. (c) 2007 American Institute of Physics.

引用

页数：3

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