Improvement in the Electrical Properties in n-ZTO/p-SiC Heterojunction Structures via Post-Annealing

被引：0
|
作者：
Park, Sung-Joon [1 ]
Jeong, Young-Seok [1 ]
Koo, Sang-Mo [1 ]
机构：
[1] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 136701, South Korea
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2017年 / 17卷 / 10期
基金：
新加坡国家研究基金会;
关键词：
Silicon Carbide; Zinc Tin Oxide; Solution-Process; Post-Annealing; Heterojunction; THIN-FILM TRANSISTORS;
D O I：
10.1166/jnn.2017.14736
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We studied the effect of the post-annealing process on the electrical properties of an n-ZTO/p-SiC (4H-SiC) heterojunction. Heterojunctions with a Zinc-Tin oxide (ZTO) active layer were fabricated via solution processing, and after post-annealing, the I-DS (@V-GS similar to 5V) increases from similar to 18.56x10(-6)A to similar to 5.52x10(-3) A, and the threshold voltage (VTH) shifted to the negative bias direction. As a result, thermally activated carriers are generated and the density of oxygen vacancies in the ZTO film decrease, as confirmed by the 1/C-2 characteristics and FTIR spectroscopy. The 1/C2 results shows that the post-annealing process depletes the width, and the built-in voltage and carrier concentration improve in the n-ZTO/p-SiC heterostructure. After post-annealing, we confirmed that the built-in voltage and carrier concentration increased to similar to 2.41V and 6.12x10(20) cm(-3) according to the changes in depletion width and resistivity.
引用
收藏
页码：7250 / 7253
页数：4
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