High-power switch with SI-thyristors for klystron pulse modulators

被引：2
|
作者：
Akemoto, M [1 ]
Honma, H [1 ]
Anami, S [1 ]
机构：
[1] High Energy Accelerator Res Org, Tsukuba, Ibaraki 3050801, Japan
来源：
CONFERENCE RECORD OF THE 2000 TWENTY-FOURTH INTERNATIONAL POWER MODULATOR SYMPOSIUM, 50TH ANNIVERSARY | 2000年
关键词：
D O I：
10.1109/MODSYM.2000.896204
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To improve the reliability of a line-type modulator for klystron, we have developed a solid-state switch with SI-thyristors to replace the thyratron tubes. Fast turn-on characteristics of SI-thyristor have been studied using a very low-inductance circuit. A maximum current of 10kA and di/dt of 110kA/mus with an anode voltage of 15kV were obtained. We have designed and built a 45kV solid-state switch that consists of 15 SI-thyristors stacked in series. The switch has been successfully operated at 45kV hold-off voltage, 6,000A peak current, 6 mus pulsewidth and 25Hz.
引用
收藏
页码：205 / 208
页数：4
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