Microporous SiO2-based solid electrolyte with improved polarization response for 0.8 V transparent thin-film transistors

被引：3
作者：
Sun, Jia [1 ,2 ,3 ]
Jiang, Jie [1 ,2 ]
Lu, Aixia [1 ,2 ]
Wan, Qing [1 ,2 ,3 ]
机构：
[1] Hunan Univ, Minist Educ, Key Lab Micronano Optoelect Devices, Changsha 410082, Hunan, Peoples R China
[2] Hunan Univ, State Key Lab Chemo Biosensing & Chemometr, Changsha 410082, Hunan, Peoples R China
[3] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 29期
基金：
中国国家自然科学基金;
关键词：
PERFORMANCE; CONDUCTIVITY;
D O I：
10.1088/0022-3727/43/29/295103
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The polarization mechanism of a microporous SiO2-based solid electrolyte is developed and three polarizations (electric double layer formation, ionic relaxation and dipole relaxation) are identified. The polarization response of the microporous SiO2-based solid electrolyte is optimized by tuning the deposition temperature and the improved specific capacitance is 1 mu F cm(-2) at 1 kHz and remains above 0.6 mu F cm(-2) even at 10 kHz. Ultralow-voltage transparent In-Zn-O thin-film transistors (TFTs) gated by such dielectrics are fabricated at low temperatures. The field-effect mobility, current on/off ratio and subthreshold swing are estimated to be 46.2 cm(2) V-1 s(-1), similar to 10(6) and 69 mV/decade, respectively. Such TFTs hold promise for portable electronic applications.
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页数：5
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