Low operation voltage field emitter arrays using low work function materials fabricated by transfer mold technique.

Extremely sharp, uniform, and low operation voltage field emitter arrays (FEAs) using low work function materials such as LaB6 and TiN have been developed by the Transfer Mold emitter fabrication technique [1,2,3] to realize high efficient and high reliable devices for the first time. Because of the sharpening effect on the tips by thermally oxidized SiO2 layer of the molds, emitter tip radii are as small as less than 10nm (2.5-5nm). The turn-on voltages of LaB6 and TiN FEA are 110-130V lower than that of conventional Mo FEA. That of the gated LaB6 FEA is as low as 28 V even without high vacuum baking treatment. Transfer Mold technique provides superior uniformity, sharpness and easiness of selecting low work function materials including diamond which might have negative electron affinity.