Impedance spectroscopy analysis of Ba0.7Sr03TiO3/La0.7Sr0.3MnO3 heterostructure

被引:94
作者
Martinez, R. [1 ,2 ]
Kumar, A. [1 ,2 ]
Palai, R. [1 ,2 ]
Scott, J. F. [1 ,2 ,3 ]
Katiyar, R. S. [1 ,2 ]
机构
[1] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA
[2] Univ Puerto Rico, Inst Funct Nanomat, San Juan, PR 00931 USA
[3] Univ Cambridge, Cavendish Lab, Dept Phys, Cambridge CB3 0HE, England
关键词
THIN-FILMS; TEMPERATURE-COEFFICIENT; DIELECTRIC-RELAXATION; ELECTRICAL-PROPERTIES; CONDUCTIVITY; RESISTANCE; MULTIFERROICS; DEPENDENCE;
D O I
10.1088/0022-3727/44/10/105302
中图分类号
O59 [应用物理学];
学科分类号
摘要
Impedance spectroscopy technique has been used to study the effect of grains and grain boundaries in a heterostructure constituted with ferromagnetic La0.7Sr0.3MnO3 (LSMO) and ferroelectric Ba0.7Sr0.3TiO3 (BST) layers grown by pulsed laser deposition technique on (1 0 0) oriented MgO substrate. Frequency and temperature dependence of the complex impedance and complex electric modulus were measured in (BST20u.c,/LSMO10u.c)(25) over a temperature range of 360-500 K. Non-Debye relaxation was observed in the investigated system. An equivalent circuit and the modified constant phase element circuit were used to describe the impedance spectroscopy, and excellent agreement between the calculated and measured curves was obtained from each model. The activation energy (similar to 0.25 eV-0.48 eV) has been obtained from Arrhenius fitting of different relaxation processes present in the material, and its characteristic values support a model of Maxwell-Wagner relaxation in the heterostructured film at elevated temperatures and in the low frequency range. The electrical ac and dc conductivity studies showed that the heterostructure possesses negative temperature coefficient of resistance properties. It was found that the resistance of grain boundaries was larger than the resistance of intra-grains.
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页数:8
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