Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes

被引：11

作者：

Wang, Lei ^{[1
]}

Liu, Ningyang ^{[2
]}

Song, Ligang ^{[3
]}

Li, Bo ^{[1
]}

Liu, Yanqiu ^{[4
]}

Cui, Yan ^{[1
]}

Li, Binhong ^{[1
]}

Zheng, Zhongshan ^{[1
]}

Chen, Zhitao ^{[2
]}

Gong, Zheng ^{[2
]}

Zhao, Wei ^{[2
]}

Cao, Xingzhong ^{[3
]}

Wang, Baoyi ^{[3
]}

Luo, Jiajun ^{[1
]}

Han, Zhengsheng ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Silicon Device Technol, Beijing 100029, Peoples R China

[2] Guangdong Inst Semicond Ind Technol, Guangzhou 510650, Guangdong, Peoples R China

[3] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China

[4] China Acad Space Technol, Mat Support Dept, Beijing 100081, Peoples R China

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2018年 / 65卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Atom displacement; carrier removal effect; carrier ultrafast dynamics; GaN; indium localization; light-emitting diodes (LEDs); nonradiative recombination centers (NRCs); positron annihilation spectroscopy (PAS); silicon ion irradiation; strain relaxation; PROTON-IRRADIATION; NEUTRON-IRRADIATION; THIN-FILMS; GAN; DEFECTS; PHOTOLUMINESCENCE; SEMICONDUCTORS; LOCALIZATION; EFFICIENCY; BAND;

D O I：

10.1109/TNS.2018.2872582

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-resolution X-ray diffraction, temperature-dependent photoluminescence (PL), time-resolved P1, and positron annihilation spectroscopy are employed to investigate the degradation mechanism of InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) under silicon ion irradiation. Reduction of the quantum-confined Stark effect due to crystalline strain relaxation, enhancement of indium localization due to thermal spike, generation of nonradiative recombination centers (NRCs), and carrier removal effect due to atom displacement are revealed to he critical factors in LEDs postirradiation performance. New NRCs are proven to be the main reason for the degradation of the internal quantum efficiency of MQWs. The increase of the threshold voltage and leakage current in LEDs are caused by the carrier removal effect and new defects in bandgap induced by radiation. In addition, new NRCs are found to appear earlier than indium localization and carrier removal effect with increasing silicon ion fluence. Atom displacement defects are revealed to be located mainly in p-type GaN and MQWs layers. Radiation-induced nitrogen vacancies are considered compensation donors in p-type GaN, whereas all other nitrogen and gallium-related defects are NRCs in MQWs.

引用

页码：2784 / 2792

页数：9

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