Selective ablation of thin SiO2 layers on silicon substrates by femto- and picosecond laser pulses

被引：25

作者：

Rublack, T. ^{[1
]}

Hartnauer, S. ^{[1
]}

Kappe, P. ^{[2
]}

Swiatkowski, C. ^{[2
]}

Seifert, G. ^{[1
]}

机构：

[1] Univ Halle Wittenberg, Inst Phys, D-06120 Halle, Germany

[2] Q Cells SE, D-06766 Bitterfeld, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2011年 / 103卷 / 01期

关键词：

FEMTOSECOND; DYNAMICS;

D O I：

10.1007/s00339-011-6352-x

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The selective ablation of thin (similar to 100 nm) SiO2 layers from silicon wafers has been investigated by applying ultra-short laser pulses at a wavelength of 800 nm with pulse durations in the range from 50 to 2000 fs. We found a strong, monotonic decrease of the laser fluence needed for complete ablation of the dielectric layer with decreasing pulse duration. The threshold fluence for 100% ablation probability decreased from 750 mJ/cm(2) at 2 ps to 480 mJ/cm(2) at 50 fs. Significant corruption of the opened Si surface has been observed above similar to 1200 mJ/cm(2), independent of pulse duration. By a detailed analysis of the experimental series the values for melting and breaking thresholds are obtained; the physical mechanisms responsible for the significant dependence on the laser pulse duration are discussed.

引用

页码：43 / 50

页数：8

共 15 条

[1] Two-photon absorption and Kerr coefficients of silicon for 850-2200 nm [J].

Bristow, Alan D. ;

Rotenberg, Nir ;

van Driel, Henry M. .

APPLIED PHYSICS LETTERS, 2007, 90 (19)

[2]

Chichkov BN, 1996, APPL PHYS A-MATER, V63, P109, DOI 10.1007/BF01567637

[3] ULTRAFAST HEATING OF SILICON ON SAPPHIRE BY FEMTOSECOND OPTICAL PULSES [J].

DOWNER, MC ;

SHANK, CV .

PHYSICAL REVIEW LETTERS, 1986, 56 (07) :761-764

[4] ULTRAFAST DYNAMICS OF LASER-EXCITED ELECTRON DISTRIBUTIONS IN SILICON [J].

GOLDMAN, JR ;

PRYBYLA, JA .

PHYSICAL REVIEW LETTERS, 1994, 72 (09) :1364-1367

[5] Picosecond laser ablation of SiO2 layers on silicon substrates [J].

Hermann, Sonja ;

Harder, Nils-Peter ;

Brendel, Rolf ;

Herzog, Dirk ;

Haferkamp, Heinz .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 99 (01) :151-158

[6] SIMPLE TECHNIQUE FOR MEASUREMENTS OF PULSED GAUSSIAN-BEAM SPOT SIZES [J].

LIU, JM .

OPTICS LETTERS, 1982, 7 (05) :196-198

[7]

Loebich O., 1972, Gold Bull., V5, P2, DOI [DOI 10.1007/BF03215148, 10.1007/bf03215148]

[8] Ablation of metals by ultrashort laser pulses [J].

Nolte, S ;

Momma, C ;

Jacobs, H ;

Tunnermann, A ;

Chichkov, BN ;

Wellegehausen, B ;

Welling, H .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1997, 14 (10) :2716-2722

[9] Ultrashort-pulse laser machining of dielectric materials [J].

Perry, MD ;

Stuart, BC ;

Banks, PS ;

Feit, MD ;

Yanovsky, V ;

Rubenchik, AM .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (09) :6803-6810

[10] Femtosecond pump-probe reflectivity study of silicon carrier dynamics [J].

Sabbah, AJ ;

Riffe, DM .

PHYSICAL REVIEW B, 2002, 66 (16) :1-11

← 1 2 →