Ce-doping induced enhancement of resistive switching performance of Pt/NiFe2O4/Pt memory devices

被引：34
作者：
Hao, Aize [1 ]
He, Shuai [1 ]
Qin, Ni [1 ]
Chen, Ruqi [1 ]
Bao, Dinghua [1 ]
机构：
[1] Sun Yat Sen Univ, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2017年 / 43卷
关键词：
Resistive switching; Ce-doping; Conducting filament; THIN-FILMS; RESISTANCE; SRTIO3;
D O I：
10.1016/j.ceramint.2017.05.214
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Ce-doping NiFe2O4 spinel ferrite thin films were prepared on Pt /Ti / SiO2 /Si substrates using a chemical solution deposition method. It has been observed that Ce-doping induced enhancement of unipolar resistive switching properties, such as uniform switching voltages, enlarged ON / OFF ratio, and long retention in Pt / NiFe2O4 / Pt memory devices. The dominant conduction mechanisms in the thin film devices were Ohmic conduction at low resistance state and lower voltage region of high resistance state, while Schottky emission dominated at higher voltage region in high resistance state. The physical mechanism of resistive switching is related to the formation and rupture of conducting filament. The improved stability of the switching parameters for the devices can be attributed to Ce-doping minimizing random formation and rupture of conductive filament. This study indicates that doping rare earth ions in ferrite thin films would be an effective approach for obtaining stable resistance switching memory devices.
引用
收藏
页码：S481 / S487
页数：7
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