Control of the chemical composition of silicon carbon nitride films formed from hexamethyldisilazane in H2/NH3 mixed gas atmospheres by hot-wire chemical vapor deposition

被引：7
作者：
Katamune, Yuki [1 ]
Mori, Hiroto [2 ]
Morishita, Fumihiro [2 ]
Izumi, Akira [2 ]
机构：
[1] Kyushu Inst Technol, Frontier Res Acad Young Researchers, 1-1 Sensuicho, Kitakyushu, Fukuoka 8048550, Japan
[2] Kyushu Inst Technol, Dept Elect & Elect Engn, 1-1 Sensuicho, Kitakyushu, Fukuoka 8048550, Japan
来源：
THIN SOLID FILMS | 2020年 / 695卷
关键词：
Silicon carbon nitride; Hot-wire chemical vapor deposition; X-ray photoelectron spectroscopy; Fourier transform infrared spectroscopy; Mechanical properties; SICN-H FILMS; THIN-FILMS; MECHANICAL-PROPERTIES; CORROSION-RESISTANCE; OPTICAL-PROPERTIES; ROOM-TEMPERATURE; ADDITIONS; HARDNESS; CARBIDE; GROWTH;
D O I：
10.1016/j.tsf.2019.137750
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon carbon nitride (SiCN) films were deposited by hot-wire chemical vapor deposition using hexamethyldisilazane (HMDS) as the single source gas diluted in ammonia (NH3) and hydrogen (H-2 ) gas mixtures. The chemical composition of the SiCN films was controlled by adjusting the NH3/H-2 flow rate ratio. X-ray photoelectron spectroscopy measurements revealed that the carbon and nitrogen contents of the films were controllable from 10 to 35 at.%, while the silicon content remained almost constant at 45 at. 0 /0. Although the homogeneity of the SiCN films deposited using HMDS diluted only with H-2 degraded with increasing stage temperature from 400 to 800 degrees C, it was improved by replacing H-2 with NH3 . Upon introducing NH3 , the nitrogen content increased as carbon content decreased accompanied by the replacement of Si-C and C-C bonds by Si-N, N-H, and C-H bonds, which led to the deterioration of the mechanical properties of the SiCN films.
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页数：6
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