Quantum-Dot Size and Thin-Film Dielectric Constant: Precision Measurement and Disparity with Simple Models

被引：46

作者：

Grinolds, Darcy D. W. ^{[1
]}

Brown, Patrick R. ^{[2
]}

Harris, Daniel K. ^{[3
]}

Bulovic, Vladimir ^{[4
]}

Bawendi, Moungi G. ^{[1
]}

机构：

[1] MIT, Dept Chem, Cambridge, MA 02139 USA

[2] MIT, Dept Phys, Cambridge, MA 02139 USA

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[4] MIT, Dept Elect Engn, Cambridge, MA 02139 USA

来源：

NANO LETTERS | 2015年 / 15卷 / 01期

基金：

美国国家科学基金会;

关键词：

Dielectric constant; quantum dot; PbS; SAXS; capacitance; SOLAR-CELLS; SILICON; PBS; NANOCRYSTALS;

D O I：

10.1021/nl5024244

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We study the dielectric constant of lead sulfide quantum dot (QD) films as a function of the volume fraction of QDs by varying the QD size and keeping the ligand constant. We create a reliable QD sizing curve using small-angle X-ray scattering (SAXS), thin-film SAXS to extract a pair-distribution function for QD spacing, and a stacked-capacitor geometry to measure the capacitance of the thin film. Our data support a reduced dielectric constant in nanoparticles.

引用

页码：21 / 26

页数：6

共 33 条

[1] Improved Current Extraction from ZnO/PbS Quantum Dot Heterojunction Photovoltaics Using a MoO3 Interfacial Layer [J].