Influence of Cooling Duration on the PTCR Effect of Sm3+d-oped BaTiO3-based Ceramics Sintered in a Reducing Atmosphere

被引:0
作者
Cheng, Xuxin [1 ]
Xiaoxia, L. [1 ]
Chen, Xiaoming [1 ]
机构
[1] Zhaoqing Univ, Coll Elect Informat & Mechatron Engn, Zhaoqing Rd, Zhaoqing 526061, Guangdong, Peoples R China
来源
4TH INTERNATIONAL CONFERENCE ON ADVANCED COMPOSITE MATERIALS AND MANUFACTURING ENGINEERING 2017 | 2017年 / 207卷
基金
中国国家自然科学基金;
关键词
POSITIVE TEMPERATURE-COEFFICIENT; SEMICONDUCTING BARIUM-TITANATE; RESISTIVITY CHARACTERISTICS; GRAIN-BOUNDARY;
D O I
10.1088/1757-899X/207/1/012105
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The influence of cooling duration on the electrical properties and the positive temperature coefficient of resistance (PTCR) characteristics of Sm-doped BaTiO3 (BST) ceramics fired at 1200 degrees C for 30 min in a reducing atmosphere and deoxidized at 800 degrees C for 1 h were investigated. The cooling duration influenced the PTCR characteristics of the BST specimens. The room-temperature resistivity of the samples firstly reduced and then increased with the increase in the content of Sm2O3. A long cooling duration resulted in low resistivity of the BST ceramics. Meanwhile, the room-temperature resistivity of the BST ceramics decreased with an increase in cooling duration. Furthermore, the S-2 samples exhibited a remarkable PTCR effect. The samples exhibited a resistance jump greater than 3.2 orders of magnitude and a low room- temperature resistivity of 228.4 Omega.cm.
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页数:5
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