1.3 mu m InGaP/InAsP MQW lasers with large spot-size and low loss fibre chip coupling fabricated by a standard buried heterostructure process

被引：7
作者：
Bouadma, N
Ougazzaden, A
Kamoun, M
Kazmierski, C
Silvestre, L
机构：
[1] France Telecom/CNET/PAB, 92225 Bagneux Cedex
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 17期
关键词：
semiconductor junction lasers; semiconductor quantum wells; optical couplers;
D O I：
10.1049/el:19961086
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
1.3 mu m large spot-size laser diodes without a mode converter fabricated by conventional buried heterostructure laser process, and using MQW core structure with low effective refractive index are demonstrated, The devices show low coupling losses to cleaved fibre, good alignment tolerances, and high temperature characteristics.
引用
收藏
页码：1582 / 1583
页数：2
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