Dense, Regular GaAs Nanowire Arrays by Catalyst-Free Vapor Phase Epitaxy for Light Harvesting

被引:1
作者
Jin, Jiehong [1 ,2 ]
Stoica, Toma [1 ,2 ,3 ]
Trellenkamp, Stefan [2 ,4 ]
Chen, Yang [5 ]
Anttu, Nicklas [5 ]
Migunov, Vadim [6 ,7 ]
Kawabata, Rudy M. S. [1 ,2 ]
Buenconsejo, Pio J. S. [8 ]
Lam, Yeng M. [8 ]
Haas, Fabian [1 ,2 ]
Hardtdegen, Hide [1 ,2 ]
Gruetzmacher, Detlev [1 ,2 ]
Kardynal, Beata E. [1 ,2 ]
机构
[1] Forschungszentrum Julich, PGI 9, D-52425 Julich, Germany
[2] Forschungszentrum Julich, JARA Fundamentals Future Informat Technol, D-52425 Julich, Germany
[3] Natl Inst Mat Phys, POB MG 7, Bucharest 077125, Romania
[4] Forschungszentrum Julich, PGI 8, D-52425 Julich, Germany
[5] Lund Univ, Div Solid State Phys & NanoLund, Box 118, S-22100 Lund, Sweden
[6] Forschungszentrum Julich, Ernst Ruska Ctr Microscopy & Spect Electrons, D-52425 Julich, Germany
[7] Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany
[8] Nanyang Technol Univ, Mat Sci & Engn, Singapore 639798, Singapore
关键词
GaAs nanowires; metalorganic vapor phase epitaxy; selective area growth; Raman spectroscopy; optical spectroscopy; SELECTIVE-AREA MOVPE; SEMICONDUCTOR NANOWIRES; SOLAR-CELLS; GROWTH; INAS; EFFICIENCY; POLYTYPISM; MECHANISM; INP;
D O I
10.1021/acsami.6b05581
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Density dependent growth and optical properties of periodic arrays of GaAs nanowires (NWs) by fast selective area growth MOVPE are investigated. As the period of the arrays is decreased from 500 nm down to 100 nm, a volume growth enhancement by a factor of up to four compared with the growth of a planar layer is observed. This increase is explained as resulting from increased collection of precursors on the side walls of the nanowires due to the gas flow redistribution in the space between the NWs. Normal spectral reflectance of the arrays is strongly reduced compared with a flat substrate surface in all fabricated arrays. Electromagnetic modeling reveals that this reduction is caused by antireflective action of the nanowire arrays and nanowire-diameter dependent light absorption. Irrespective of the periodicity and diameter, Raman scattering and grazing angle X-ray diffraction show signal from zinc blende and wurtzite phases, the latter-originating from stacking faults, as observed by high resolution transmission electron microscopy. Raman spectra contain intense surface phonons peaks, whose intensity depends strongly on the nanowire diameters as a result of potential structural changes and as well as variations of optical field distribution in the nanowires.
引用
收藏
页码:22484 / 22492
页数:9
相关论文
共 39 条
  • [1] An empirical potential approach to wurtzite-zinc-blende polytypism in group III-V semiconductor nanowires
    Akiyama, T
    Sano, K
    Nakamura, K
    Ito, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11): : L275 - L278
  • [2] Scattering matrix method for optical excitation of surface plasmons in metal films with periodic arrays of subwavelength holes
    Anttu, N.
    Xu, H. Q.
    [J]. PHYSICAL REVIEW B, 2011, 83 (16)
  • [3] Crystal Phase-Dependent Nanophotonic Resonances in InAs Nanowire Arrays
    Anttu, Nicklas
    Lehmann, Sebastian
    Storm, Kristian
    Dick, Kimberly A.
    Samuelson, Lars
    Wu, Phillip M.
    Pistol, Mats-Erik
    [J]. NANO LETTERS, 2014, 14 (10) : 5650 - 5655
  • [4] Anttu N, 2013, OPT EXPRESS, V21, pA558, DOI 10.1364/OE.21.00A558
  • [5] Electronic bands of III-V semiconductor polytypes and their alignment
    Belabbes, Abderrezak
    Panse, Christian
    Furthmueller, Juergen
    Bechstedt, Friedhelm
    [J]. PHYSICAL REVIEW B, 2012, 86 (07)
  • [6] 25th Anniversary Article: Semiconductor Nanowires Synthesis, Characterization, and Applications
    Dasgupta, Neil P.
    Sun, Jianwei
    Liu, Chong
    Brittman, Sarah
    Andrews, Sean C.
    Lim, Jongwoo
    Gao, Hanwei
    Yan, Ruoxue
    Yang, Peidong
    [J]. ADVANCED MATERIALS, 2014, 26 (14) : 2137 - 2184
  • [7] Semiconductor nanowires: From self-organization to patterned growth
    Fan, HJ
    Werner, P
    Zacharias, M
    [J]. SMALL, 2006, 2 (06) : 700 - 717
  • [8] Growth of nanowire superlattice structures for nanoscale photonics and electronics
    Gudiksen, MS
    Lauhon, LJ
    Wang, J
    Smith, DC
    Lieber, CM
    [J]. NATURE, 2002, 415 (6872) : 617 - 620
  • [9] Surface optical phonions in gallium phosphide nanowires
    Gupta, R
    Xiong, Q
    Mahan, GD
    Eklund, PC
    [J]. NANO LETTERS, 2003, 3 (12) : 1745 - 1750
  • [10] Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires
    Haas, F.
    Sladek, K.
    Winden, A.
    von der Ahe, M.
    Weirich, T. E.
    Rieger, T.
    Lueth, H.
    Gruetzmacher, D.
    Schaepers, Th
    Hardtdegen, H.
    [J]. NANOTECHNOLOGY, 2013, 24 (08)