Electrical properties of GaAsN film grown by chemical beam epitaxy

被引：29

作者：

Nishimura, K. ^{[1
]}

Suzuki, H. ^{[1
]}

Saito, K. ^{[1
]}

Ohshita, Y. ^{[1
]}

Kojima, N. ^{[1
]}

Yamaguchi, M. ^{[1
]}

机构：

[1] Toyota Technol Inst, Tempa Ku, Nagoya, Aichi 4688511, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2007年 / 401卷 / 343-346期

关键词：

GaAsN; chemical beam epitaxy; FTIR; hole concentration;

D O I：

10.1016/j.physb.2007.08.183

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The local vibrational modes (LVMs) observed by Fourier transform infrared (FTIR) spectroscopy in GaAsN films grown by chemical beam epitaxy (CBE) was studied, and the influence of the nitrogen-hydrogen bond (N-H) concentration on the hole concentration was investigated. The absorption peak around 936 cm(-1) is suggested to be the second harmonic mode of the substitutional N, N-As, LVM around 469cm(-1). The absorption peak around 960cm(-1) is suggested to be the wagging mode of the N-H, where the stretch mode is observed around 3098 cm(-1.) The hole concentration linearly increases with increasing N-H concentration, and the slope increases with increasing growth temperature. It indicates that the hole concentration in GaAsN film is determined by both the number of the N H and unknown defect, such as impurities, vacancies, and interstitials. This defect concentration increases with increasing growth temperature, suggesting that it is determined by Arrhenius type reaction. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：343 / 346

页数：4

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