Development and Verification of Protection Circuit for Hard Switching Fault of SiC MOSFET by Using Gate-Source Voltage and Gate Charge

被引：0
|
作者：
Yano, Shinya [1 ]
Nakamatsu, Yusuke [1 ]
Horiguchi, Takeshi [1 ]
Soda, Shinnosuke [1 ]
机构：
[1] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo, Japan
来源：
2019 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2019年
关键词：
SiC; MOSFET; HSF; Short-Circuit; Gate Charge (Qg); Gate-Source Voltage (Vgs);
D O I：
10.1109/ecce.2019.8912618
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This paper describes a protection circuit for SiC MOSFETs from hard switching faults(HSF). The proposed protection circuit monitors not only the gate-source voltage but also the amount of gate charge. There are great benefits of this method like high speed protection and not requiring additional current sensing cells and terminals. In this paper, it was verified experimentally that the proposed circuit can protect HSF at not only room temperature but also high temperature and does not erroneous detect during synchronous rectification.
引用
收藏
页码：6661 / 6665
页数：5
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