Study of deep level defect behavior in undoped n-InP (100) after rapid thermal annealing

被引:3
作者
Janardhanam, V. [1 ,2 ]
Kumar, A. Ashok [2 ]
Reddy, V. Rajagopal [2 ]
Choi, Chel Jong [1 ,3 ]
机构
[1] Chonbuk Natl Univ, Dept BIN Fus Technol, Jeonju 561756, South Korea
[2] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India
[3] Chonbuk Natl Univ, Sch Semicond & Chem Engn, SPRC, Jeonju 561756, South Korea
关键词
Indium phosphide; Deep level transient spectroscopy; Schottky contacts; Rapid thermal annealing; ENCAPSULATED CZOCHRALSKI INP; CURRENT SPECTROSCOPY; TRAPS;
D O I
10.1016/j.mee.2010.10.031
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effects of rapid thermal annealing on deep level defects in the undoped n-type InP with Ru as Schottky contact metal have been characterized using deep level transient spectroscopy (DLTS). It is observed that the as-deposited sample exhibit two deep levels with activation energies of 0.66 and 0.89 eV. For the samples annealed at 300 degrees C and 400 degrees C, a deep level is identified with activation energies 0.89 and 0.70 eV, respectively below the conduction band. When the sample is annealed at 500 degrees C, three deep levels are observed with activation energies 0.25, 0.32 and 0.66 eV. Annealing of the sample at 300 degrees C, orders the lattice of as-grown material by suppressing the defect 0.66 eV (A1) which is found in the as-deposited sample. The trap concentration of the 0.89 eV deep levels is found to be increased with annealing temperature. The deep level 0.32 eV may be due to the lattice defect by thermal damage during rapid thermal annealing process such as vacancies, interstitials and its complexes, indicating the damage of the sample after annealing at 500 degrees C. The defects observed in all the samples are possibly due to the creation of phosphorous vacancy or phosphorous antisite. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:506 / 508
页数:3
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