High-rate synthesis of graphene by a lower cost chemical vapor deposition route

被引：10

作者：

Dayou, Sebastian ^{[1
]}

Vigolo, Brigitte ^{[2
]}

Desforges, Alexandre ^{[2
]}

Ghanbaja, Jaafar ^{[2
]}

Mohamed, Abdul Rahman ^{[1
]}

机构：

[1] Univ Sains Malaysia, Sch Chem Engn, Engn Campus, Perai, Pulau Pinang, Malaysia

[2] Univ Lorraine, CNRS, Inst Jean Lamour, BP 70239, F-54506 Vandouvre Les Nancy, France

来源：

JOURNAL OF NANOPARTICLE RESEARCH | 2017年 / 19卷 / 10期

关键词：

Graphene; Chemical vapor deposition; Synthesis rate; Metal particles; Catalyst; Thermogravimetric analysis; High yield production; SINGLE-CRYSTAL GRAPHENE; WALLED CARBON NANOTUBES; GROWTH; CHALLENGES; NANOSHEETS; SUBSTRATE; OXIDATION; CATALYST; DEVICES; STORAGE;

D O I：

10.1007/s11051-017-4034-0

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Chemical vapor deposition (CVD) reaction from metal particles to produce graphene has seldom been reported so far. In this paper, the CVD growth of graphene was conducted under ambient pressure without a dedicated stage for reduction treatment. Interestingly, copper nanoparticles supported on MgO prepared by simple impregnation were able to efficiently catalyze graphene. Quantification of the prepared graphene was carefully conducted. For the optimized conditions, 1000 degrees C for 30 min, high content of graphene (up to 27 at.%) could be produced. Our method shows high efficiency and growth rate of graphene, produced at much lower cost compared to the existing methods.

引用

页数：9

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