On the potential of Er-doped AlN film as luminescence sensing layer for multilayer Al/AlN coating health monitoring

被引：16

作者：

Fang, Liping ^{[1
]}

Yin, Anyi ^{[1
]}

Zhu, Shengfa ^{[1
]}

Ding, Jingjing ^{[1
]}

Chen, Lin ^{[1
]}

Zhang, Dongxu ^{[1
]}

Pu, Zhen ^{[1
]}

Liu, Tianwei ^{[1
]}

机构：

[1] China Acad Engn Phys, Inst Mat, Mianyang 621700, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2017年 / 727卷

基金：

美国国家科学基金会;

关键词：

Aluminum nitride; Erbium doping; Magnetron sputtering; Photoluminescence; Luminescence sensing; MECHANICAL-PROPERTIES; THIN-FILMS; MICROSTRUCTURE; ORIENTATION; ALUMINUM; GAN; SI;

D O I：

10.1016/j.jallcom.2017.08.174

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Luminescence sensing is an attractive approach for in-situ monitoring the health and integrity of multilayered surface protective coatings on highly active metals. In this work, we demonstrate the potential of erbium (Er) doped aluminum nitride (AlN) films to be applied as luminescence sensing layer in the Al/AlN multilayered coating system. The AlN: Er films were prepared by radio-frequency magnetron sputtering from Al targets doped with varied concentrations (from 0.5 at.% to 2.5 at.%) of Er. The chemical composition, surface morphology, crystal structure, chemical state and optical properties of the deposited AlN: Er films were investigated. We found that the crystal structure, surface roughness and optical properties of the AlN: Er films have strong correlations with the Er doping level. The as-deposited AlN: Er films showed the characteristic photoluminescence emission lines of the trivalent Er ions in the visible frequency range and quenching was observed when the Er doping level increased to 2.5 at.%. This work signifies the viability of AlN: Er film as luminescence sensing layer and the optimal Er doping concentration of the Al sputtering target is 2.0 at.% for practical applications. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：735 / 743

页数：9

共 38 条

[1]

[Anonymous], 1978, THIN FILM PROCESSES

[2]

Azzam R. M. A., 1977, Ellipsometry and polarized light

[3] Structural, chemical and optical characterizations of nanocrystallized AIN:Er thin films prepared by r.f. magnetron sputtering [J].

Brien, V. ;

Miska, P. ;

Rinnert, H. ;

Geneve, D. ;

Pigeat, P. .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2008, 146 (1-3) :200-203

[4] Erbium location into AIN films as probed by spatial resolution experimental techniques [J].

Brien, V. ;

Boulet, P. .

ACTA MATERIALIA, 2015, 90 :37-45

[5]

Butcher KSA, 1997, SURF INTERFACE ANAL, V25, P99, DOI 10.1002/(SICI)1096-9918(199702)25:2<99::AID-SIA212>3.0.CO

[6]

2-U

[7] Doped Oxides for High-Temperature Luminescence and Lifetime Thermometry [J].

Chambers, M. D. ;

Clarke, D. R. .

ANNUAL REVIEW OF MATERIALS RESEARCH, 2009, 39 :325-359

[8] Emission spectra from AlN and GaN doped with rare earth elements [J].

Choi, SW ;

Emura, S ;

Kimura, S ;

Kim, MS ;

Zhou, YK ;

Teraguchi, N ;

Suzuki, A ;

Yanase, A ;

Asahi, H .

JOURNAL OF ALLOYS AND COMPOUNDS, 2006, 408 :717-720

[9] Local structure and bonding of Er in GaN: A contrast with Er in Si [J].

Citrin, PH ;

Northrup, PA ;

Birkhahn, R ;

Steckl, AJ .

APPLIED PHYSICS LETTERS, 2000, 76 (20) :2865-2867

[10] Impact of magnetron configuration on plasma and film properties of sputtered aluminum nitride thin films [J].

Duquenne, C. ;

Tessier, P. Y. ;

Besland, M. P. ;

Angleraud, B. ;

Jouan, P. Y. ;

Aubry, R. ;

Delage, S. ;

Djouadi, M. A. .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (06)

← 1 2 3 4 →