Effect of conductive substrate (working electrode) on the morphology of electrodeposited Cu2O

被引：34

作者：

ELmezayyen, Ayman S. ^{[1
,2
]}

Guan, Shian ^{[2
]}

Reicha, Fikry M. ^{[1
]}

El-Sherbiny, Ibrahim M. ^{[3
]}

Zheng, Jianming ^{[2
]}

Xu, Chunye ^{[2
]}

机构：

[1] Mansoura Univ, Fac Sci, Dept Phys, Biol Adv Mat, Mansoura 35516, Egypt

[2] Univ Sci & Technol China, Dept Mat Phys & Chem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China

[3] Ctr Mat Sci, Zewail City Sci & Technol, Giza, Egypt

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2015年 / 48卷 / 17期

关键词：

morphology; Cu2O thin film; electrodeposition; OXIDE THIN-FILMS; CUPROUS-OXIDE; OPTICAL-PROPERTIES; COMPOSITE; NANOTUBES; BEHAVIOR; CATHODE; GROWTH;

D O I：

10.1088/0022-3727/48/17/175502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cu2O thin films were electrodeposited from a Cu(II) acetate solution containing 0.02 M Copper(II) acetate (Cu(OAc) 2) and 0.1 M sodium acetate (NaOAc) at pH 5.6, using three different working conductive electrodes with approximately the same square resistance -indium doped tin oxide glass (ITO/Glass), fluorine-doped tin oxide glass (FTO/Glass), and indium doped tin oxide polyethylene terephthalate (ITO/PET)-under identical conditions using a common growth condition. The Cu2O thin films were characterized by means of scanning electron microscopy, x-ray diffraction (XRD), current density versus growth time for Cu2O films, and electrochemical impedance spectroscopy. The results showed that the choice of substrate materials has a crucial role in controlling Cu2O growth. The charge transfer resistance (Rct) of FTO/Glass-Cu2O exhibits the lowest value; this means that FTO/Glass-Cu2O possess the highest electron transfer efficiency. All Cu2O films showed n-type semiconductor characteristic with charge carrier densities varying between 1.4 x 10(18)-1.2 x 10(19) cm(-3).

引用

页数：9

共 34 条

[31] Room temperature fabrication of p-channel Cu2O thin-film transistors on flexible polyethylene terephthalate substrates [J].