Effect of conductive substrate (working electrode) on the morphology of electrodeposited Cu2O

被引:34
作者
ELmezayyen, Ayman S. [1 ,2 ]
Guan, Shian [2 ]
Reicha, Fikry M. [1 ]
El-Sherbiny, Ibrahim M. [3 ]
Zheng, Jianming [2 ]
Xu, Chunye [2 ]
机构
[1] Mansoura Univ, Fac Sci, Dept Phys, Biol Adv Mat, Mansoura 35516, Egypt
[2] Univ Sci & Technol China, Dept Mat Phys & Chem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China
[3] Ctr Mat Sci, Zewail City Sci & Technol, Giza, Egypt
关键词
morphology; Cu2O thin film; electrodeposition; OXIDE THIN-FILMS; CUPROUS-OXIDE; OPTICAL-PROPERTIES; COMPOSITE; NANOTUBES; BEHAVIOR; CATHODE; GROWTH;
D O I
10.1088/0022-3727/48/17/175502
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cu2O thin films were electrodeposited from a Cu(II) acetate solution containing 0.02 M Copper(II) acetate (Cu(OAc) 2) and 0.1 M sodium acetate (NaOAc) at pH 5.6, using three different working conductive electrodes with approximately the same square resistance -indium doped tin oxide glass (ITO/Glass), fluorine-doped tin oxide glass (FTO/Glass), and indium doped tin oxide polyethylene terephthalate (ITO/PET)-under identical conditions using a common growth condition. The Cu2O thin films were characterized by means of scanning electron microscopy, x-ray diffraction (XRD), current density versus growth time for Cu2O films, and electrochemical impedance spectroscopy. The results showed that the choice of substrate materials has a crucial role in controlling Cu2O growth. The charge transfer resistance (Rct) of FTO/Glass-Cu2O exhibits the lowest value; this means that FTO/Glass-Cu2O possess the highest electron transfer efficiency. All Cu2O films showed n-type semiconductor characteristic with charge carrier densities varying between 1.4 x 10(18)-1.2 x 10(19) cm(-3).
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页数:9
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