Grain boundary dislocation sources in nanocrystalline copper

被引:98
作者
Tschopp, M. A. [1 ,3 ]
McDowell, D. L. [1 ,2 ]
机构
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
[3] Univ Technol Corp, Dayton, OH 45432 USA
基金
美国国家科学基金会;
关键词
molecular dynamics; plastic deformation; dislocations; grain boundaries; nanocrystalline materials;
D O I
10.1016/j.scriptamat.2007.10.010
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Atomistic simulations of dislocation nucleation from grain boundaries provide an insight into dislocation sources in nanocrystalline copper. Simulations show that dislocation sources emit single partial dislocation loops, with half absorbed into the boundary and half emitted into the lattice. The specific boundary dislocation content determines whether the absorbed half-loop annihilates pre-existing boundary dislocations or increases boundary dislocations. Atomistic studies of this type provide details of the emission sequence that enhance our understanding of dislocation sources in high angle boundaries. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:299 / 302
页数:4
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