Investigation of thermal and optical properties of thin WO3 films by the photothermal Deflection Technique

被引:8
|
作者
Gaied, I. [1 ]
Dabbous, S. [2 ]
Ben Nasrallah, T. [2 ]
Yacoubi, N. [1 ]
机构
[1] IPEIN, Merazka 8000, Nabeul, Tunisia
[2] Univ Tunis, Fac Sci, Tunis, Tunisia
关键词
SPECTROSCOPY; DIFFUSIVITY;
D O I
10.1088/1742-6596/214/1/012112
中图分类号
O59 [应用物理学];
学科分类号
摘要
Owing to its novel physical properties, as well as its technological implication in many fields, the thermal and optical properties of WO3 thin films are studied here. These thin films are prepared from Ammonium Tungstate and deposited on a glass substrate at 400 degrees C by the Spray Pyrolysis Technique. The thermal properties (Thermal conductivity and thermal diffusivity) were studied by the Photothermal Deflection method in its uniform heating case instead of traditionally a non uniform heating one by comparing the experimental amplitude and phase variations versus square root modulation frequency to the corresponding theoretical ones. The best coincidence between theory and experience is obtained for well-defined values of thermal conductivity and thermal diffusivity. The optical properties (optical absorption spectrum and gap energy) were measured using the Photothermal Deflection Spectroscopy (PDS) by drawing the amplitude and phase variation versus wavelength in experimental way and versus absorption coefficient in theoretical one at a fixed modulation frequency. By comparing point by point the normalised experimental and corresponding theoretical amplitude variation, one can deduce the optical absorption spectrum. Using the Tauc law for energies above the gap we can deduce the gap energy. We notice that these films show low thermal conductivity and high transparency in the visible range.
引用
收藏
页数:5
相关论文
共 50 条
  • [21] Optical and structural properties of sol-gel made WO3 and Zr doped WO3 thin films
    Ozkan, E
    Tepehan, F
    FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2000, 4086 : 435 - 438
  • [22] Investigation of Thermal Properties of thin Semiconductor Layers Deposited on a Glass Substrate by the Photothermal Deflection Technique
    Gaied, Imen
    Ben Rabeh, Mohamed
    Rabhi, Adel
    Kanzari, Mounir
    Yacoubi, Noureddine
    DIFFUSION IN SOLIDS AND LIQUIDS V, PTS 1 AND 2, 2010, 297-301 : 537 - +
  • [23] Porous nanocrystalline WO3 thin films: fabrication, electrical and optical properties
    Wang, Zhiwei
    Su, Jiangbin
    Qi, Hao
    Pan, Peng
    Jiang, Meiping
    SURFACE INNOVATIONS, 2021, 9 (04) : 214 - 221
  • [24] Optical properties of Li+ doped electrochromic WO3 thin films
    Porqueras, I
    Bertran, E
    THIN SOLID FILMS, 2000, 377 : 8 - 13
  • [25] Structural, optical, and surface properties of WO3 thin films for solar cells
    Simchi, H.
    McCandless, B. E.
    Meng, T.
    Shafarman, W. N.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 617 : 609 - 615
  • [26] Electrical, optical and electrochromic properties of Ti:WO3 thin films deposited by the pulsed chemical spray technique
    Acosta, Dwight R.
    Magana, Carlos
    Hernandez, Francisco
    Ortega, Jesus
    THIN SOLID FILMS, 2015, 594 : 207 - 214
  • [27] Probing Temperature Dependent Dielectric and Optical Properties of WO3 Thin Films by Surface Plasmon Resonance Technique
    Paliwal, Ayushi
    Sharma, Anjali
    Tomar, Monika
    Gupta, Vinay
    ADVANCED SCIENCE LETTERS, 2014, 20 (7-9) : 1522 - 1525
  • [28] Gas sensing properties of WO3 thin films
    Jiang, Miao
    Hou, Feng
    Xu, Tingxian
    Xu, Mingxia
    Kuei Suan Jen Hsueh Pao/ Journal of the Chinese Ceramic Society, 2004, 32 (09): : 1064 - 1067
  • [29] A study on the gasochromic properties Of WO3 thin films
    Zhuang, L
    Xu, XQ
    Shen, H
    SURFACE & COATINGS TECHNOLOGY, 2003, 167 (2-3): : 217 - 220
  • [30] Investigation of the Optical Property and Structure of WO3 Thin Films with Different Sputtering Depositions
    Chen, Hsi-Chao
    Jan, Der-Jun
    Chen, Chien-Han
    Huang, Kuo-Ting
    Lo, Yen-Ming
    Chen, Sheng-Hui
    ADVANCES IN OPTICAL THIN FILMS IV, 2011, 8168