High permittivity lanthanum-doped barium titanate sintered in pure nitrogen

被引：0
作者：
Li, Yanxia [1 ]
Yao, Xi [1 ]
Yao, Yuzhou [1 ]
Zhang, Liangying [1 ]
Shen, Bo [1 ]
机构：
[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
来源：
FERROELECTRICS | 2007年 / 356卷
关键词：
high permittivity; La-doped BaTiO3; defect chemistry; IBLC (internal barrier layer capacitor); pure nitrogen;
D O I：
10.1080/00150190701509363
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper investigated the dielectrics properties of La-doped BaTiO3 sintered in pure nitrogen. The influence of variable doping concentration on microstructure and dielectric properties was studied. A new series of dielectrics with high permittivity of 160,000 similar to 280,000 and low dissipation factor of 0.1 measured at 1 kHz, meeting the X8R specification of the Electronic Industries Association Standards (TCC within +/-15% from -55 degrees C to +150'degrees) were obtained in this study. The doping mechanism of La-doped BaTiO3 was analyzed. The ceramics consisted of semiconducting grain cores with insulating grain boundaries, which is the origin of high permittivity.
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收藏
页码：394 / 399
页数：6
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