Band alignment analysis of CuGaO2/β-Ga2O3 heterojunction and application to deep-UV photodetector

被引：39
作者：
Shi, Jianjun [1 ,2 ]
Liang, Hongwei [3 ]
Xia, Xiaochuan [3 ]
Abbas, Qasim [4 ]
机构：
[1] Changzhi Univ, Dept Phys, Changzhi 046011, Shanxi, Peoples R China
[2] Changzhi Univ, Dept Phyics, Lab Opt Field Manipulat, Changzhi 046011, Shanxi, Peoples R China
[3] Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China
[4] Yibin Univ, Dept Intelligent Mfg, Yibin 644000, Sichuan, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2021年 / 569卷
基金：
美国国家科学基金会;
关键词：
Band alignment; Energy band offsets; Photodetector; CuGaO2; beta-Ga2O3; BETA-GA2O3; SINGLE-CRYSTALS; CUGAO2; GROWTH; FILMS; SI;
D O I：
10.1016/j.apsusc.2021.151010
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Single-oriented CuGaO2 films have been successfully grown on beta-Ga2O3 (201) substrate by reactive deposition epitaxy. The energy band offsets and alignment at CuGaO2/beta-Ga2O3 heterojunction are investigated by x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). A type-II band alignment is identified at CuGaO2/beta-Ga2O3 heterojunction with valence band offset (VBO) of 1.63 eV and conduction band offset (CBO) of 0.45 eV. The CuGaO2/beta-Ga2O3 heterojunction based ultraviolet photodetector is prepared which exhibits an obvious ultraviolet (UV) photoresponse at zero bias voltage. The combination between beta-Ga2O3 and wide bandgap delafossite oxide semiconductor may open up possibilities for next generation self-power deep UV optoelectronic devices in future.
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页数：6
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