Transport characterization of GaAs quantum dots connected with quantum wires fabricated by selective area metalorganic vapor phase epitaxy

被引：5

作者：

Kumakura, K ^{[1
]}

Motohisa, J ^{[1
]}

Fukui, T ^{[1
]}

机构：

[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Sapporo, Hokkaido 060, Japan

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 7-8期

基金：

日本学术振兴会;

关键词：

D O I：

10.1016/S0038-1101(98)00009-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated novel quantum nanostructures where the quantum dots are connected with quantum wires using metalorganic vapor phase epitaxy (MOVPE) on (001) GaAs masked substrates. In particular a GaAs single electron transistor was successfully fabricated and its transport properties were investigated. We prepared two devices which have artificially designed two- or three-prominences in the channel region. These prominences produced a quantum clot connecting with quantum wires in applying the gate voltage. By comparing the electrical properties of the two devices, we discussed a model for formation of quantum dot and tunneling barriers in the channel. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1227 / 1231

页数：5

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