Strain-controlled spin splitting in the conduction band of monolayer WS2

被引:49
作者
Absor, Moh. Adhib Ulil [1 ]
Kotaka, Hiroki [2 ]
Ishii, Fumiyuki [3 ,4 ]
Saito, Mineo [3 ,4 ]
机构
[1] Univ Gadjah Mada, Dept Phys, BLS 21, Yogyakarta, Indonesia
[2] Osaka Univ, ISIR SANKEN, Ibaraki, Osaka 5670047, Japan
[3] Kanazawa Univ, Fac Math, Kanazawa, Ishikawa 9201192, Japan
[4] Kanazawa Univ, Phys Inst Sci & Engn, Kanazawa, Ishikawa 9201192, Japan
关键词
FIELD-EFFECT TRANSISTORS; TRANSITION-METAL DICHALCOGENIDES; MOS2; RELAXATION; TRANSPORT; CONTACTS;
D O I
10.1103/PhysRevB.94.115131
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Spin splitting bands that arise in the conduction band minimum (CBM) of the WS2 monolayer (ML) play an important role in the spin-orbit phenomena such as spin-valley coupled electronics. However, application of strain strongly modifies electronic properties of the WS2 ML, which is expected to significantly affect the properties of the spin splitting bands. Here, by using fully-relativistic first-principles calculations based on density-functional theory, we show that a substantial spin splitting band observed in the CBM is effectively controlled and tuned by applying the biaxial strain. We also find that these spin splitting bands induce spin textures exhibiting fully out-of-plane spin polarization in the opposite direction between the K and Q points and their time reversals in the first Brillouin zone. Our study clarifies that the strain plays a significant role in the spin-orbit coupling of the WS2 ML, which has very important implications in designing future spintronics devices.
引用
收藏
页数:6
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共 44 条
[1]   Spin-split bands of metallic hydrogenated ZnO (10(1)over-bar0) surface: First-principles study [J].
Absor, Moh Adhib Ulil ;
Ishii, Fumiyuki ;
Kotaka, Hiroki ;
Saito, Mineo .
AIP ADVANCES, 2016, 6 (02)
[2]   Persistent spin helix on a wurtzite ZnO(10(1)over-bar0) surface: First-principles density-functional study [J].
Absor, Moh Adhib Ulil ;
Ishii, Fumiyuki ;
Kotaka, Hiroki ;
Saito, Mineo .
APPLIED PHYSICS EXPRESS, 2015, 8 (07)
[3]   Tunable Rashba effect on strained ZnO: First-principles density-functional study [J].
Absor, Moh Adhib Ulil ;
Kotaka, Hiroki ;
Ishii, Fumiyuki ;
Saito, Mineo .
APPLIED PHYSICS EXPRESS, 2014, 7 (05)
[4]   BAND STRUCTURES OF SOME TRANSITION-METAL DICHALCOGENIDES .3. GROUP VI A - TRIGONAL PRISM MATERIALS [J].
BROMLEY, RA ;
YOFFE, AD ;
MURRAY, RB .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (07) :759-&
[5]   First-principles theory of field-effect doping in transition-metal dichalcogenides: Structural properties, electronic structure, Hall coefficient, and electrical conductivity [J].
Brumme, Thomas ;
Calandra, Matteo ;
Mauri, Francesco .
PHYSICAL REVIEW B, 2015, 91 (15)
[6]   High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts [J].
Chuang, Hsun-Jen ;
Tan, Xuebin ;
Ghimire, Nirmal Jeevi ;
Perera, Meeghage Madusanka ;
Chamlagain, Bhim ;
Cheng, Mark Ming-Cheng ;
Yan, Jiaqiang ;
Mandrus, David ;
Tomanek, David ;
Zhou, Zhixian .
NANO LETTERS, 2014, 14 (06) :3594-3601
[7]   Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials [J].
Coleman, Jonathan N. ;
Lotya, Mustafa ;
O'Neill, Arlene ;
Bergin, Shane D. ;
King, Paul J. ;
Khan, Umar ;
Young, Karen ;
Gaucher, Alexandre ;
De, Sukanta ;
Smith, Ronan J. ;
Shvets, Igor V. ;
Arora, Sunil K. ;
Stanton, George ;
Kim, Hye-Young ;
Lee, Kangho ;
Kim, Gyu Tae ;
Duesberg, Georg S. ;
Hallam, Toby ;
Boland, John J. ;
Wang, Jing Jing ;
Donegan, John F. ;
Grunlan, Jaime C. ;
Moriarty, Gregory ;
Shmeliov, Aleksey ;
Nicholls, Rebecca J. ;
Perkins, James M. ;
Grieveson, Eleanor M. ;
Theuwissen, Koenraad ;
McComb, David W. ;
Nellist, Peter D. ;
Nicolosi, Valeria .
SCIENCE, 2011, 331 (6017) :568-571
[8]   Anisotropic spin transport in (110) GaAs quantum wells [J].
Couto, O. D. D., Jr. ;
Iikawa, F. ;
Rudolph, J. ;
Hey, R. ;
Santos, P. V. .
PHYSICAL REVIEW LETTERS, 2007, 98 (03)
[9]   ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].
DATTA, S ;
DAS, B .
APPLIED PHYSICS LETTERS, 1990, 56 (07) :665-667
[10]   Spintronic single-qubit gate based on a quantum ring with spin-orbit interaction -: art. no. 033309 [J].
Földi, P ;
Molnár, B ;
Benedict, MG ;
Peeters, FM .
PHYSICAL REVIEW B, 2005, 71 (03)