Strain-controlled spin splitting in the conduction band of monolayer WS2

被引:47
作者
Absor, Moh. Adhib Ulil [1 ]
Kotaka, Hiroki [2 ]
Ishii, Fumiyuki [3 ,4 ]
Saito, Mineo [3 ,4 ]
机构
[1] Univ Gadjah Mada, Dept Phys, BLS 21, Yogyakarta, Indonesia
[2] Osaka Univ, ISIR SANKEN, Ibaraki, Osaka 5670047, Japan
[3] Kanazawa Univ, Fac Math, Kanazawa, Ishikawa 9201192, Japan
[4] Kanazawa Univ, Phys Inst Sci & Engn, Kanazawa, Ishikawa 9201192, Japan
关键词
FIELD-EFFECT TRANSISTORS; TRANSITION-METAL DICHALCOGENIDES; MOS2; RELAXATION; TRANSPORT; CONTACTS;
D O I
10.1103/PhysRevB.94.115131
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Spin splitting bands that arise in the conduction band minimum (CBM) of the WS2 monolayer (ML) play an important role in the spin-orbit phenomena such as spin-valley coupled electronics. However, application of strain strongly modifies electronic properties of the WS2 ML, which is expected to significantly affect the properties of the spin splitting bands. Here, by using fully-relativistic first-principles calculations based on density-functional theory, we show that a substantial spin splitting band observed in the CBM is effectively controlled and tuned by applying the biaxial strain. We also find that these spin splitting bands induce spin textures exhibiting fully out-of-plane spin polarization in the opposite direction between the K and Q points and their time reversals in the first Brillouin zone. Our study clarifies that the strain plays a significant role in the spin-orbit coupling of the WS2 ML, which has very important implications in designing future spintronics devices.
引用
收藏
页数:6
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