Synthesis and formation mechanism of novel double-thick-walled silicon carbide nanotubes from multiwalled carbon nanotubes

In this study, double-thick-walled (DTW) silicon carbide (SiC) nanotubes, the walls of which comprise connected disordered polycrystalline nanograins, were successfully synthesized for the first time via the reaction of multiwalled carbon nanotubes (MWCNTs) with Si powder. DTW SiC nanotubes are expected to exhibit novel properties unlike other SiC nanomaterials, owing to their intriguing geometries. The DTW SiC nanotubes had a wall thickness exceeding 20 nm, regardless of the external diameter, as indicated by transmission electron microscopy results. The DTW SiC nanotubes with a spacing of above 30 nm between the outer and inner nanotubes exhibited perfect double-walled structures. The inner and outer nanotubes were not connected in any region. When all the carbon was transformed into SiC, the volume of carbon increased to 2.2 times the initial value. These results reveal that DTW SiC nanotubes with perfect structures cannot be synthesized without an MWCNT wall thickness of at least 50 nm. Several types of DTW SiC nanotubes with different morphologies, such as diameter, end structure, and distance between the inner and outer nanotubes, were synthesized. The morphology of DTW SiC nanotubes can be controlled by changing the wall thickness and/or diameter of the original MWCNTs and the reaction conditions.