Selenization of Cu2ZnSnSe4 Thin Films by Rapid Thermal Processing

In this study showed that the single phases CZTSe were successfully synthesized without any other secondary phase existed. EDS measurement results showed that the Cu poor and Zn rich thin films. Subsequently, selenization the CZTSe precursor films were prepared by rapid thermal annealing (RTA). A few minutes of annealing at 550 degrees C are sufficient to produce crystalline CZTSe films with grain sizes in the micrometer range. We found that CZTSe nanoparticles for short reaction time 3hr, the mixture of various intermediate phase such as CuSe2, ZnSe and Zn, Selenization obtained pure CZTSe phase and CZTSe thin films grain sizes about 1 mu m similar to 2 mu m. Selenization the CZTSe reaction time for 3hr obtained single CZTSe phase. It can reduce the CZTSe thin films process and obtained uniform, great crystalline thin films.