Enhanced phonon-assisted absorption in single InAs/GaAs quantum dots -: art. no. 161309

被引：83

作者：

Lemaître, A

Ashmore, AD

Finley, JJ

Mowbray, DJ

Skolnick, MS

Hopkinson, M

Krauss, TF

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[3] Univ St Andrews, Dept Phys & Astron, St Andrews KY16 9SS, Fife, Scotland

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.63.161309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Exciton-longitudinal optic-phonon coupling in InAs/GaAs quantum dots is investigated by means of single-dot spectroscopy. Photoluminescence spectra in the excitonic ground-state region exhibit a series of new emission lines which we ascribe to single exciton recombination perturbed by charged defects close to the dot. Compared to unperturbed excitonic recombination, the resulting dipole in these complexes leads to enhanced coupling to LO phonons in photoluminescence excitation spectra. Evidence for resonant enhancement of phonon-assisted processes ill absorption is also presented.

引用

页数：4

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