Combined Raman and transmission spectroscopy of ZnTe under pressure

被引：10
作者：
Frogley, MD
Dunstan, DJ
Palosz, W
机构：
[1] Univ London Queen Mary & Westfield Coll, Dept Phys, London E1 4NS, England
[2] NASA, George C Marshall Space Flight Ctr, Space Sci Lab, Huntsville, AL 35812 USA
来源：
SOLID STATE COMMUNICATIONS | 1998年 / 107卷 / 10期
关键词：
semiconductors; electronic band structure; optical; properties; phonons; strain; high pressure;
D O I：
10.1016/S0038-1098(98)00276-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report measurements of both Raman and transmission spectroscopy in the same samples, under high pressure. The combination of two spectroscopies is shown to improve the reliability of the data. The phase transition is found at 940 +/- 0.2 kbar. The pressure dependence of the band gap is described by a density deformation potential of 4.90 +/- 0.15 eV, or a linear pressure coefficient of 10.2 +/- 0.3 meV kbar(-1) at ambient pressure. We find that the shifts of the LO and TO phonon energies are linear with the shift of the band gap and therefore fit to a linear dependence on density with corresponding deformation potentials of 223 +/- 3 cm(-1) (LO) and 290 +/- 3 cm(-1) (TO). (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：537 / 541
页数：5
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