A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths

被引：125

作者：

Xue, Hui ^{[1
]}

Wang, Yadong ^{[1
]}

Dai, Yunyun ^{[1
]}

Kim, Wonjae ^{[4
]}

Jussila, Henri ^{[1
]}

Qi, Mei ^{[5
]}

Susoma, Jannatul ^{[1
]}

Ren, Zhaoyu ^{[6
,7
]}

Dai, Qing ^{[8
]}

Zhao, Jianlin ^{[2
,3
]}

Halonen, Kari ^{[1
]}

Lipsanen, Hard ^{[1
]}

Wang, Xiaomu ^{[2
,3
,9
]}

Gan, Xuetao ^{[2
,3
]}

Sun, Zhipei ^{[1
,10
]}

机构：

[1] Aalto Univ, Dept Elect & Nanoengn, Espoo 02150, Finland

[2] Northwestern Polytech Univ, Sch Sci, MOE Key Lab Mat Phys & Chem Extraordinary Condit, Xian 710072, Shaanxi, Peoples R China

[3] Northwestern Polytech Univ, Sch Sci, Shaanxi Key Lab Opt Informat Technol, Xian 710072, Shaanxi, Peoples R China

[4] VTT Tech Res Ctr Finland, Espoo 02150, Finland

[5] Northwest Univ, Sch Informat Sci & Technol, Xian 710127, Shaanxi, Peoples R China

[6] Northwest Univ, Int Cooperat Base Photoelect Technol & Funct Mat, State Key Lab Incubat Base Photoelect Technol & F, Nanobiophoton Ctr, Xian 710069, Shaanxi, Peoples R China

[7] Northwest Univ, Inst Photon & Photon Technol, Xian 710069, Shaanxi, Peoples R China

[8] Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, Nanophoton Res Div, Beijing 100190, Peoples R China

[9] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China

[10] Aalto Univ, Dept Appl Phys, QTF Ctr Excellence, FI-00076 Aalto, Finland

来源：

ADVANCED FUNCTIONAL MATERIALS | 2018年 / 28卷 / 47期

基金：

芬兰科学院;

关键词：

MoSe2; photodetectors; sub-bandgap photodetection; van der Waals heterojunction; WSe2; PHOTOCURRENT GENERATION; INFRARED PHOTODETECTION; MONOLAYER MOS2; BROAD-BAND; HETEROSTRUCTURES; GRAPHENE; RESPONSIVITY; DRIVEN;

D O I：

10.1002/adfm.201804388

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few-layer MoSe2/WSe2 vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high-sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent-to-dark current ratio reach up to 127 mA W-1 and 1.9 x 10(4) mW(-1), respectively. The results not only provide a promising solution to realize high-performance vdW telecommunication band photodetectors, but also pave the way for using sub-bandgap engineering of two-dimensional layered materials for photonic and optoelectronic applications.

引用

页数：7

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