ZnO nanotubes (ZNTs) have been successfully evolved from ZnO nanorods (ZNRs) by a simple chemical etching process. Two peaks located at 382 and 384 nm in the UV emission region has been observed in the room temperature photoluminescence (PL) spectrum of ZNTs since the surface band bending in ZNTs induces the coexistence of indirect and direct transitions in their emission process. In addition, a strong enhancement of total luminescence intensity at room temperature in ZNTs has also be observed in comparison with that of ZNRs. Both temperature-dependent PL and time-resolved PL results not only further testify the coexistence of indirect and direct transitions due to the surface band bending but also reveal that less nonradiative contribution to the emission process in ZNTs finally causes their stronger luminescence intensity. (C) 2010 American Institute of Physics. [doi:10.1063/1.3511345]
机构:
Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New ZealandUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand
Heinhold, R.
Williams, G. T.
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Global Innovat Ctr, Element Six Ltd, Didcot OX11 0QR, Oxon, EnglandUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand
Williams, G. T.
Cooil, S. P.
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Aberystwyth Univ, Dept Math & Phys, Aberystwyth SY23 3BZ, Dyfed, WalesUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand
Cooil, S. P.
Evans, D. A.
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Aberystwyth Univ, Dept Math & Phys, Aberystwyth SY23 3BZ, Dyfed, WalesUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand
Evans, D. A.
Allen, M. W.
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Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New ZealandUniv Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8043, New Zealand
机构:
Walailak Univ, Sch Sci, Mol Technol Res Unit, Nakhon Si Thammarat 80160, ThailandWalailak Univ, Sch Sci, Mol Technol Res Unit, Nakhon Si Thammarat 80160, Thailand
Pholnak, Chat
Sirisathitkul, Chitnarong
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Walailak Univ, Sch Sci, Mol Technol Res Unit, Nakhon Si Thammarat 80160, ThailandWalailak Univ, Sch Sci, Mol Technol Res Unit, Nakhon Si Thammarat 80160, Thailand
Sirisathitkul, Chitnarong
Harding, David James
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Walailak Univ, Sch Sci, Mol Technol Res Unit, Nakhon Si Thammarat 80160, ThailandWalailak Univ, Sch Sci, Mol Technol Res Unit, Nakhon Si Thammarat 80160, Thailand
Harding, David James
Suwanboon, Sumetha
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Prince Songkla Univ, Fac Sci, Dept Mat Sci & Technol, Hat Yai 90112, Songkhla, ThailandWalailak Univ, Sch Sci, Mol Technol Res Unit, Nakhon Si Thammarat 80160, Thailand
机构:
Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Peoples R China
Beijing Computat Sci Res Ctr, Beijing 100193, Peoples R ChinaHengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Peoples R China
Tang, Zhen-Kun
Wen, Bo
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Beijing Computat Sci Res Ctr, Beijing 100193, Peoples R ChinaHengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Peoples R China
Wen, Bo
Chen, Mingyang
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Beijing Computat Sci Res Ctr, Beijing 100193, Peoples R ChinaHengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Peoples R China
Chen, Mingyang
Liu, Li-Min
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Beihang Univ, Sch Phys, Beijing 100191, Peoples R ChinaHengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Peoples R China