The Effect of Different Silicon Nitride Passivation Recipes on the DC Characteristics of AlGaN/GaN HEMTs

被引：0

作者：

Laishram, Robert ^{[1
]}

Kumar, Sunil ^{[1
]}

Dayal, Sindhu ^{[1
]}

Chaubey, Rupesh K. ^{[1
]}

Raman, R. ^{[1
]}

Sehgal, B. K. ^{[1
]}

机构：

[1] Def Res & Dev Org, Solid State Phys Lab, Lucknow Rd, Delhi 110054, India

来源：

2014 IEEE 2ND INTERNATIONAL CONFERENCE ON EMERGING ELECTRONICS (ICEE) | 2014年

关键词：

AlGaN/GaN HEMTs; SiN passivation; Raman analysis; Threshold Voltage Shift; Current Collapse; ELECTRON-MOBILITY TRANSISTORS; CURRENT COLLAPSE; RAMAN-SCATTERING; GAN; SI(111); IMPACT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The changes in dc characteristics of AlGaN/ GaN HEMT after ICP- CVD silicon nitride (SiNx) passivation using two different recipes were investigated. Room temperature Raman analysis was performed to determine the stress state of the AlGaN layer after SiNx passivation. The changes in the stress state of the device after passivation was correlated with the shift in threshold voltage and changes in drain current. DC measurement was used as a quick method to assess the drain current collapse. The degree of current collapse in the samples passivated with two different recipes is discussed in the light of the results, and hypothesis and explanations reported in the literature.

引用

页数：4

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